Scanning Electron Microscope
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X-ray diffractometer
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Rapid Thermal Annealing (RTA) system○ Gas: N2, O2
○ Halogen Lamp ○ Max Temperature: 1100 ℃ ○ Ramp rate : 50~120 ℃/sec for Silicon wafer ○ Wafer size & Product yield : 4 inch, 1 wafer/run ○ Temperature accuracy : <3 ℃ ○ Steady State Temperature Stability : <1℃ |
Haze Meter○ Sample size: min. 25 mm x 25 mm
○ STD: <0.03% ○ Light source: white LED ○ Total transmittance, Haze |
Flame generator/burner
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Photoelectrochemical (PEC) measurement system
- Solar water splitting measurements
- Electrocatalysis measurement
- Solar cells measurements